Longer wheel life in "rough machining" prior to surface grinding of SiC wafers
The production of compound semiconductor wafers, which are used as substrates for power devices, is expected to grow steadily in the trend toward power saving in a low-carbon society. The key to this growth is the processing cost of wafers, which requires a longer wheel life due to the large amount of allowance in the rough machining prior to surface grinding.
Our porous vitrified bond wheel "VEGA" has both a larger pore diameter and a higher porosity than conventional wheels, maximizing the biting performance to work materials. It is particularly suitable for surface grinding of SiC wafers and can grind 6" SiC wafers without dressing. The excellent wear resistance increases the number of wafers that can be machined per wheel and contributes to the reduction of wafer machining costs.
Life comparison test with conventional product
Machine : High rigidity grinder
Wheel spec. : #2000 Vitrified bond
Material : 6inch SiC (C)
“VEGA” Porous vitrified bond wheel for compound semiconductor wafers
Bond : Porous vitrified bond
Grain size : #1000～#3000
SiC, GaN, GaAs, LT/LN
■The biting performance to work materials is maximized by both a larger pore diameter and a higher porosity than conventional wheels.
■Spontaneous blade generation is realized and cutting quality is maintained by bonds that can make ultrafine shredding.
■Stable high-quality surface and low processing cost can be realized.