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“Taffair” Porous Metal Bond Wheel for Semiconductor Wafers

“Taffair” Porous Metal Bond Wheel for Semiconductor Wafers

Product summary

High grinding performance and long tool life for processing of sapphire or SiC wafers
■The porous structure of metal bonds improves biting for higher grinding performance and enhances heat dissipation for longer tool life.
■Not only abrasion resistance of highly rigid metal bonds but also maintaining of cutting quality by appropriate spontaneous blade generation are realized.
■Longer tool life contributes to the stabilization of processing quality and reduction of processing cost.

Details of a product

“Taffair” Porous Metal Bond Wheel for Semiconductor Wafers
<Processing condition>
Wheel Spec. : SD325L12M4B10
φ297D Tornade Type
Machine : Vertical Grinder @ NTS
Material : 4” Sapphire Wafer
3pcs/batch
Ex. Removal Stock : 650um
Grinding Step 1
-> VEL : 1.7um/sec / S Out : 6sec
Grinding Step 2
-> VEL : 0.7um/sec / S Out : 6sec
Grinding Step 3
-> VEL : 0.5um/sec / S Out : 3sec
Wheel RPM   : 900rpm
Chack RPM  : 120rpm
TTV       : ≦4um

Surface roughness Ra=1.70um Rp=11.64um Rv=4.70um Rz=17.85um

Component Material of the Tools・Bond

Metal bond

Use

Glass、Ceramics、Semiconductor wafers、GaN、SiC、Lithium tantalate、Lithium niobate、Sapphire wafers、Magnetic materials、Quartz、Polycrystalline silicon

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